| 92年3月21日 11:00~12:30 電子工程學系數位組 | 誠實是我們珍視的美德, 我們喜愛「拒絕作弊,堅守正直」的你! |
| 科目:電 子 學 |
| 1. |
For the circuit shown in Fig.1, assume ideal diodes, fill in the following table.(8%) |
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| 2. | For the circuit shown in Fig.2, assume the large signal model
for the diode is a short circuit when VD |
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| (a) | Find the dc current, ID Q, and the dc voltage, VD Q, of the diode in the circuit shown if Vin is+10V. (b)Repeat part (a) if Vin=-9V.(12%) | |
| 3. | Consider the simplified transistor circuit model shown in Fig.3, gm =800 mA/V | |
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| (a) | What is vx in terms of vi? | |
| (b) | Find vo in terms of vi. | |
| (c) | What is the voltage gain vo/vi? | |
| 4. | For the circuit shown in Fig.4, assume ideal op amplifiers(16%) | |
| (a) | Find Vx and Vout in terms of the R's and vs's. | |
| (b) | If R2=2R1, R4=4R3, vs1=1V and vs2=2V, find Vout=? | |
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| 5. | For the PNP circuit shown in Fig.5, for the following cases
(a) and (b), find the node voltages VE and VC, and
the currents IE,IC,and IB. Use |
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| (a) | VB=-4V, (b)VB=-6V (20%) | |
| 6. | The enhancement nMOSFETs shown in Fig.6 have |
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| 7. | For the circuit shown in Fig.7, determine the expression for
Vo/Vs in terms of Rs1, Rs2, Rf2,and Cf1
as function of frequency |
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