中原大學九十二學年度碩士班入學招生考試

92年3月21日 11:00~12:30 電子工程學系數位組   誠實是我們珍視的美德,
我們喜愛「拒絕作弊,堅守正直」的你!
科目:電 子 學  

1.

For the circuit shown in Fig.1, assume ideal diodes, fill in the following table.(8%)

    
     
2. For the circuit shown in Fig.2, assume the large signal model for the diode is a short circuit when VD0V and an open circuit when VD0V,
  (a) Find the dc current, ID Q, and the dc voltage, VD Q, of the diode in the circuit shown if Vin is+10V. (b)Repeat part (a) if Vin=-9V.(12%)
     
3. Consider the simplified transistor circuit model shown in Fig.3, gm =800 mA/V
 
  (a) What is vx in terms of vi?
  (b) Find vo in terms of vi.
  (c) What is the voltage gain vo/vi?
     
4. For the circuit shown in Fig.4, assume ideal op amplifiers(16%)
  (a) Find Vx and Vout in terms of the R's and vs's.
  (b) If R2=2R1, R4=4R3, vs1=1V and vs2=2V, find Vout=?
 
     
5. For the PNP circuit shown in Fig.5, for the following cases (a) and (b), find the node voltages VE and VC, and the currents IE,IC,and IB. Use =50 and |VEB|=0.7V. If you conclude that the transistor is in saturation, use VEC =0.2V.
  (a) VB=-4V, (b)VB=-6V       (20%)
     
6. The enhancement nMOSFETs shown in Fig.6 have =0.8V. If they are fabricated with an technology, find the values of R and gate widths W1 and W2 necessary to produce the voltages and currents indicated.(14%)
      
     
7. For the circuit shown in Fig.7, determine the expression for Vo/Vs in terms of Rs1, Rs2, Rf2,and Cf1 as function of frequency .(10%)
   
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