| 所組別 : | 電子工程學系乙組 | 科目 : | 電子學 | 考試時間 : | 05月01日第3節 |
Problem 1 (25%)
For the circuit shown in Fig.1, let b= 100, VBE(on) = 0.7V, and the Early voltage, VA = 100V, find the values of the labeled node voltages.
Problem 2 (20%)
For the multi-transistor current source circuit shown in Fig.2, the transistor parameters are VTHN = 1V, mnCox = 50 u A/V2, and l = 0 (l :channel length modulation factor). Assume M1, M2, and M3 are identical. Design the circuit and find the (W/L)M1 and (W/L)M4 such that Iref = 0.2mA and Io = 0.2mA.
Problem 3 (25%)
Consider the basic MOSFT amplifier with active load shown in Fig.3. The transistor parameters are: VTHN = |VTHP| = 1V, mnCox = 40 u A/V2, mpCox = 20uA/V2,λN=λP = 0.02V-1| (a) | Assume M1, M2 and M3 are identical and the quiescent input voltage is VIQ = 2V, the quiescent output voltage is to be VOQ = 2.5V, design the circuit and find the (W/L)M1 and (W/L)M4 such that Iref = Io = 100uA. |
| (b) | Determine the open-circuit small-signal voltage gain. |

Problem 4 (30%)
Consider the one-pole low-pass filter shown in Fig.4| (a) | Derive the transfer function of Vo(s) / Vin(s). |
| (b) | If Cf = 10 pF, determine the value of Rf such that the cutoff frequency f3dB = 10 kHz. In addition, if a gain of –100 is desired, find the value of R1. |
| (c) | Draw the equivalent switched-capacitor circuit for replacing the filter shown in Fig.4
![]() Fig.4 |