私立中原大學八十八學年度研究所招生考試命題紙

所組別 :電子工程學系乙組 科目 :電子學 考試時間 : 05月01日第3節


Problem 1 (25%)

For the circuit shown in Fig.1, let b= 100, VBE(on) = 0.7V, and the Early voltage, VA = 100V, find the values of the labeled node voltages.

Fig.1

Problem 2 (20%)

For the multi-transistor current source circuit shown in Fig.2, the transistor parameters are VTHN = 1V, mnCox = 50 u A/V2, and l = 0 (l :channel length modulation factor). Assume M1, M2, and M3 are identical. Design the circuit and find the (W/L)M1 and (W/L)M4 such that Iref = 0.2mA and Io = 0.2mA.

Fig.2

Problem 3 (25%)

Consider the basic MOSFT amplifier with active load shown in Fig.3. The transistor parameters are: VTHN = |VTHP| = 1V, mnCox = 40 u A/V2, mpCox = 20uA/V2,λN=λP = 0.02V-1
(a)Assume M1, M2 and M3 are identical and the quiescent input voltage is VIQ = 2V, the quiescent output voltage is to be VOQ = 2.5V, design the circuit and find the (W/L)M1 and (W/L)M4 such that Iref = Io = 100uA.
(b)Determine the open-circuit small-signal voltage gain.

Fig.3

Problem 4 (30%)

Consider the one-pole low-pass filter shown in Fig.4
(a)Derive the transfer function of Vo(s) / Vin(s).
(b)If Cf = 10 pF, determine the value of Rf such that the cutoff frequency f3dB = 10 kHz. In addition, if a gain of –100 is desired, find the value of R1.
(c)Draw the equivalent switched-capacitor circuit for replacing the filter shown in Fig.4

Fig.4

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